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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220F package *Complement to type 2SB1274 *High reliability. *High breakdown voltage *Low saturation voltage. *Wide area of safe operation APPLICATIONS *60V/3A low-frequency power amplifier *General power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1913 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 3 8 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE= IE=1mA; IC=0 IC=2A ; IB=0.2A IC=0.5A ; VCE=5V VCB=40V;IE=0 VEB=4V;IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 70 20 100 40 MIN 60 60 6 0.4 0.8 TYP. 2SD1913 MAX UNIT V V V 1.0 1.0 0.1 0.1 280 V V mA mA MHz pF hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1913 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1913 4 |
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